InGaAs room temperature photovoltaic infrared detectorPVA-1.7-d1AR-TO39-BK7-70-B

PVA-1.7-d1AR-TO39-BK7-70-B is an uncooled photovoltaic IR detector based on InGaAs heterostructure for optimal performance and stability. Its 10% cut-off wavelength (λ_cut-off) is 1.7 µm and the diameter (d_A) of its active element (anti-reflection coated) is 1.0 mm. The detector is available in the TO39 package with a planar borosilicate window (BK7).

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Features

Cut-off wavelength: 1.7 μm

Anti-reflection coating on the active element

III-V material compliant with the RoHS Directive

High ambient operating and storage temperature

Long-term stability and reliability

Front-side illuminated

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4

Telecommunication

LIDARs

Laser range finder, laser warning system

Lasers and diodes life tests

Food analysis

Pharmaceutical analysis

Detector configuration

Detector symbol	PVA-1.7-d1AR-TO39-BK7-70-B
Detector type	photovoltaic
Active element material	epitaxial InGaAs heterostructure
Cooling	no
Temperature sensor	n/a
Active area diameter, d_A	1 mm
Optical immersion	no
Package	TO39
Acceptance angle, Φ	~70 deg.
Window	BK7 (borosilicate glass)

Specification

(T_amb = T_chip = 293 K, V_b = -5 V, unless otherwise noted)

Parameter	Value			Unit
	Min.	Typ.	Max.	-
Peak wavelength, λ_peak	-	1.59±0.03		μm
Cut-off wavelength, λ_cut-off (10%)	1.69	1.71	-	μm
Detectivity, D* (λ= 1.55 μm, f = 20 kHz)	6.0×10¹¹	1.0×10¹²	-	cm·Hz^1/2/W
Current responsivity, R_i (λ= 1.55 μm)	1.00	1.02	-	A/W
Dark current, I_dark	-	25	50	nA
Dark current density, J_dark	-	3.5×10^-6	7.0×10^-6	A/cm²
Terminal capacitance, C_t	25	40	50	pF
3 dB bandwidth, (R_load = 5 Ω)	-	180	-	MHz
Resistance, R (V_b = -10 mV)	3	-	-	MΩ
Bias voltage, V_b	-	-5	-	V