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InGaAs room temperature photovoltaic infrared detectorPVA-1.7-d1AR-TO39-BK7-70-B

PVA-1.7-d1AR-TO39-BK7-70-B is an uncooled photovoltaic IR detector based on InGaAs heterostructure for optimal performance and stability. Its 10% cut-off wavelength (λcut-off) is 1.7 µm and the diameter (dA) of its active element (anti-reflection coated) is 1.0 mm. The detector is available in the TO39 package with a planar borosilicate window (BK7).


Cut-off wavelength: 1.7 μm

Anti-reflection coating on the active element

III-V material compliant with the RoHS Directive

High ambient operating and storage temperature

Long-term stability and reliability

Front-side illuminated

No minimum order quantity required


Gas detection, monitoring and analysis: CH4



Laser range finder, laser warning system

Lasers and diodes life tests

Food analysis

Pharmaceutical analysis

Detector configuration

Detector symbol PVA-1.7-d1AR-TO39-BK7-70-B
Detector type photovoltaic
Active element material epitaxial InGaAs heterostructure
Cooling no
Temperature sensor n/a
Active area diameter, dA 1 mm
Optical immersion no
Package TO39
Acceptance angle, Φ ~70 deg.
Window BK7 (borosilicate glass)


(Tamb = Tchip = 293 K, Vb = -5 V, unless otherwise noted)

Parameter Value Unit
Min. Typ. Max.
Peak wavelength, λpeak 1.59±0.03 μm
Cut-off wavelength, λcut-off (10%) 1.69 1.71 μm
Detectivity, D* (λ= 1.55 μm, f = 20 kHz) 6.0×1011 1.0×1012 cm·Hz1/2/W
Current responsivity, Ri (λ= 1.55 μm) 1.00 1.02 A/W
Dark current, Idark 25 50 nA
Dark current density, Jdark 3.5×10-6 7.0×10-6 A/cm2
Terminal capacitance, Ct 25 40 50 pF
3 dB bandwidth, (Rload = 5 Ω) 180 MHz
Resistance, R (Vb = -10 mV) 3
Bias voltage, Vb -5 V

Spectral response

(Typ., Tamb = Tchip = 293 K)


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Temperature sensor characteristics

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