HgCdTe four-stage thermoelectrically cooled photovoltaic infrared detectorsPV-4TE-6-0.1x0.1-TO8/TO66-wZnSeAR-70
PV-4TE-6-0.1x0.1-TO8-wZnSeAR-70 and PV-4TE-6-0.1x0.1-TO66-wZnSeAR-70 are four-stage thermoelectrically cooled (4TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 6.0 µm and their active area (A) is 0.1 mm × 0.1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: 2.6 to 6.8 µm
Back-side illuminated
Four-stage thermoelectrically cooled
No bias required
No1/f noise
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx, SOx, HNO3
Exhaust gas denitrification
Combustion process control
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Heat-seeking, thermal signature detection
Non-destructive material testing
Biochemical analysis
Laser calibration
Detector configuration
Detector symbol
|
PV-4TE-6-0.1x0.1-TO8-wZnSeAR-70 |
PV-4TE-6-0.1x0.1-TO66-wZnSeAR-70 |
Detector type
|
photovoltaic |
|
Active element material | epitaxial HgCdTe heterostructure | |
Cooling | 4TE (Tchip ≅ 198 K) | |
Temperature sensor | thermistor | |
Active area, A | 0.1 mm × 0.1 mm | |
Optical immersion | no | |
Package | 4TE-TO8 | 4TE-TO66 |
Acceptance angle, Φ | ~70 deg. | |
Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) |
Specification
(Tamb = 293 K, Tchip = 198 K, Vb = 0 V)
Parameter | Value |
Unit | |||
Min. | Typ. | Max. | - | ||
Cut-on wavelength, λcut-on (10%) | - | 2.6 | - | μm | |
Peak wavelength, λpeak | - | 5.4±0.2 | - | μm | |
Specific wavelength, λspec | - | 6.0 | - | μm | |
Cut-off wavelength, λcut-off (10%) | - | 6.8 | - | μm | |
Detectivity, D* (λpeak, 20 kHz) | - | 1.2×109 | - | cm⋅Hz1/2/W | |
Detectivity, D* (λspec, 20 kHz) | 4.0×109 | 9.0×109 | - | cm⋅Hz1/2/W | |
Current responsivity, Ri (λpeak) | - | 2.5 | - | A/W | |
Current responsivity, Ri (λspec) | 1.3 | 1.8 | - | A/W | |
Time constant, τ | - | 50 | - | ns | |
Dynamic resistance, Rd | 0.6 | 1.5 | - | kΩ |
Spectral response
(Typ., Tamb = 293 K, Tchip = 198 K)
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Application notes