home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic IR detectors PV-4TE-6-0.1x0.1-TO8/TO66-wZnSeAR-70

HgCdTe four-stage thermoelectrically cooled photovoltaic infrared detectorsPV-4TE-6-0.1x0.1-TO8/TO66-wZnSeAR-70

PV-4TE-6-0.1x0.1-TO8-wZnSeAR-70 and PV-4TE-6-0.1x0.1-TO66-wZnSeAR-70 are four-stage thermoelectrically cooled (4TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 6.0 µm and their active area (A) is 0.1 mm × 0.1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.

Features

Spectral range: 2.6 to 6.8 µm

Back-side illuminated

Four-stage thermoelectrically cooled

No bias required

No1/f noise

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx, SOx, HNO3

Exhaust gas denitrification

Combustion process control

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Heat-seeking, thermal signature detection

Non-destructive material testing

Biochemical analysis

Laser calibration

Detector configuration

Detector symbol
PV-4TE-6-0.1x0.1-TO8-wZnSeAR-70
PV-4TE-6-0.1x0.1-TO66-wZnSeAR-70
Detector type
photovoltaic
Active element material epitaxial HgCdTe heterostructure
Cooling 4TE (Tchip ≅ 198 K)
Temperature sensor thermistor
Active area, A 0.1 mm × 0.1 mm
Optical immersion no
Package 4TE-TO8 4TE-TO66
Acceptance angle, Φ ~70 deg.
Window wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating)

Specification

(Tamb = 293 K, Tchip = 198 K, Vb = 0 V)

Parameter Value

Unit
Min. Typ. Max. -
Cut-on wavelength, λcut-on (10%) - 2.6 - μm
Peak wavelength, λpeak - 5.4±0.2 - μm
Specific wavelength, λspec - 6.0 - μm
Cut-off wavelength, λcut-off (10%) - 6.8 - μm
Detectivity, D* (λpeak, 20 kHz) - 1.2×109 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 4.0×109 9.0×109 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 2.5 - A/W
Current responsivity, Rispec) 1.3 1.8 - A/W
Time constant, τ - 50 - ns
Dynamic resistance, Rd 0.6 1.5 -

Spectral response

(Typ., Tamb = 293 K, Tchip = 198 K)

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Temperature sensor characteristics

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