HgCdTe four-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-4TE-10.6-1x1-TO8/TO66-wZnSeAR-36
PCI-4TE-10.6-1x1-TO8-wZnSeAR-36 and PCI-4TE-10.6-1x1-TO66-wZnSeAR-36 are four-stage thermoelectrically cooled (4TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 10.6 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coated window (wZnSeAR) to prevent unwanted interference effects.
Features
Spectral range: over 12.8 µm
Back-side illuminated
Four-stage thermoelectrically cooled
Unique immersion lens technology applied
No minimum order quantity required
Applications
Gas detection, monitoring and analysis: SO2, NH3, SF6
CBRN threats detection
CO2 laser measurements: power monitoring and control, beam profiling and positioning, calibration
Free-space optical communication
FTIR spectroscopy
Bacteria identification in medicine
Dentistry
Glucose sensing
Detector configuration
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Detector symbol
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PCI-4TE-10.6-1x1-TO8-wZnSeAR-36 |
PCI-4TE-10.6-1x1-TO66-wZnSeAR-36 |
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Detector type
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photoconductive |
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| Active element material | epitaxial HgCdTe heterostructure | |
| Cooling | 4TE (Tchip ≅ 200 K) | |
| Temperature sensor | thermistor | |
| Active area, A | 1 mm × 1 mm | |
| Optical immersion | hyperhemisphere | |
| Package | 4TE-TO8 | 4TE-TO66 |
| Acceptance angle, Φ | ~36 deg. | |
| Window | wZnSeAR (3 deg. wedged zinc selenide, anti-reflection coating) | |
Specification
(Tamb = 293 K, Tchip = 200 K, Vb = 0.4 V)
| Parameter | Value |
Unit | |||
| Min. | Typ. | Max. | - | ||
| Peak wavelength, λpeak | - | 9.5±0.6 | - | μm | |
| Specific wavelength, λspec | - | 10.6 | - | μm | |
| Cut-off wavelength, λcut-off (10%) | - | 12.5 | - | μm | |
| Detectivity, D* (λpeak, 20 kHz) | - | 4.1×109 | - | cm⋅Hz1/2/W | |
| Detectivity, D* (λspec, 20 kHz) | 3.0×109 | 3.0×109 | - | cm⋅Hz1/2/W | |
| Current responsivity, Ri (λpeak) | - | 0.7 | - | A/W | |
| Current responsivity, Ri (λspec) | 0.2 | 0.4 | - | A/W | |
| Time constant, τ | - | 30 | - | ns | |
| Resistance, R | - | - | 200 | Ω | |
| Bias voltage, Vb | - | 0.24 | - | V | |
| 1/f corner frequency, fc | - | 20 | - | kHz | |
Spectral response
(Typ., Tamb = 293 K, Tchip = 200 K)
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Application notes
Temperature sensor characteristics
Related products
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