home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / HgCdTe photoconductive IR detectors PCI-2TE-5-1x1-TO8/TO66-wAl2O3-36

HgCdTe two-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-2TE-5-1x1-TO8/TO66-wAl2O3-36

PCI-2TE-5-1x1-TO8-wAl2O3-36 and PCI-2TE-5-1x1-TO66-wAl2O3-36 are two-stage thermoelectrically cooled (2TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 5.0 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl2O3) to prevent unwanted interference effects.

Features

Spectral range: over 5.6 µm

Back-side illuminated

Two-stage thermoelectrically cooled

Unique immersion lens technology applied

No minimum order quantity required

Applications

Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring

Flame and explosion detection

Threat warning systems

Heat-seeking, thermal signature detection

Dentistry

Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx

Breath analysis: C2H6, CH2O, NH3, NO, OCS

Gas leak detection

Combustion process control

Non-destructive material testing

Detector configuration

Detector symbol
PCI-2TE-5-1x1-TO8-wAl2O3-36
PCI-2TE-5-1x1-TO66-wAl2O3-36
Detector type
photoconductive
Active element material epitaxial HgCdTe heterostructure
Cooling 2TE (Tchip ≅ 230 K)
Temperature sensor thermistor
Optical area, Ao 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 2TE-TO8 2TE-TO66
Acceptance angle, Φ ~36 deg.
Window wAl2O3 (3 deg. wedged sapphire)

Specification

(Tamb = 293 K, Tchip = 230 K, Vb = 0.5 V)

Parameter Value
Unit
Min. Typ. Max. -
Peak wavelength, λpeak - 4.6±0.3 - μm
Specific wavelength, λspec - 5.0 - μm
Cut-off wavelength, λcut-off (10%) - 5.5 - μm
Detectivity, D* (λpeak, 20 kHz) - 4.0×1010 - cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 2.0×1010 6.0×1010 - cm⋅Hz1/2/W
Current responsivity, Ripeak) - 90 - A/W
Current responsivity, Rispec) 30 60 - A/W
Time constant, τ - 20 - μs
Resistance, R - - 750 Ω
Bias voltage, Vb - 0.5 - V
1/f corner frequency, fc - 20 - kHz

Spectral response

(Typ., Tamb = 293 K, Tchip = 230 K)

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Temperature sensor characteristics

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