HgCdTe two-stage thermoelectrically cooled optically immersed photoconductive infrared detectorsPCI-2TE-5-1x1-TO8/TO66-wAl2O3-36
PCI-2TE-5-1x1-TO8-wAl2O3-36 and PCI-2TE-5-1x1-TO66-wAl2O3-36 are two-stage thermoelectrically cooled (2TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 5.0 µm and their optical area (Ao) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl2O3) to prevent unwanted interference effects.
Features
Spectral range: over 5.6 µm
Back-side illuminated
Two-stage thermoelectrically cooled
Unique immersion lens technology applied
No minimum order quantity required
Applications
Contactless temperature measurement: railway transport, industrial and laboratory processes monitoring
Flame and explosion detection
Threat warning systems
Heat-seeking, thermal signature detection
Dentistry
Gas detection, monitoring and analysis: CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6, CO, CO2, NOx
Breath analysis: C2H6, CH2O, NH3, NO, OCS
Gas leak detection
Combustion process control
Non-destructive material testing
Detector configuration
Detector symbol
|
PCI-2TE-5-1x1-TO8-wAl2O3-36 |
PCI-2TE-5-1x1-TO66-wAl2O3-36 |
Detector type
|
photoconductive |
|
Active element material | epitaxial HgCdTe heterostructure | |
Cooling | 2TE (Tchip ≅ 230 K) | |
Temperature sensor | thermistor | |
Optical area, Ao | 1 mm × 1 mm | |
Optical immersion | hyperhemisphere | |
Package | 2TE-TO8 | 2TE-TO66 |
Acceptance angle, Φ | ~36 deg. | |
Window | wAl2O3 (3 deg. wedged sapphire) |
Specification
(Tamb = 293 K, Tchip = 230 K, Vb = 0.5 V)
Parameter | Value |
Unit | |||
Min. | Typ. | Max. | - | ||
Peak wavelength, λpeak | - | 4.6±0.3 | - | μm | |
Specific wavelength, λspec | - | 5.0 | - | μm | |
Cut-off wavelength, λcut-off (10%) | - | 5.5 | - | μm | |
Detectivity, D* (λpeak, 20 kHz) | - | 4.0×1010 | - | cm⋅Hz1/2/W | |
Detectivity, D* (λspec, 20 kHz) | 2.0×1010 | 6.0×1010 | - | cm⋅Hz1/2/W | |
Current responsivity, Ri (λpeak) | - | 90 | - | A/W | |
Current responsivity, Ri (λspec) | 30 | 60 | - | A/W | |
Time constant, τ | - | 20 | - | μs | |
Resistance, R | - | - | 750 | Ω | |
Bias voltage, Vb | - | 0.5 | - | V | |
1/f corner frequency, fc | - | 20 | - | kHz |
Spectral response
(Typ., Tamb = 293 K, Tchip = 230 K)
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Application notes