home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photoconductive IR detectors PC-4TE-9-1×1-TO8/TO66-wZnSeAR-70

HgCdTe four-stage thermoelectrically cooled photoconductive infrared detectorsPC-4TE-9-1×1-TO8/TO66-wZnSeAR-70

PC-4TE-9-1×1-TO8-wZnSeAR-70 and PC-4TE-9-1×1-TO66-wZnSeAR-70 are four-stage thermoelectrically cooled (4TE) photoconductive IR detectors based on HgCdTe heterostructures for optimal performance and stability. Their specific wavelength (λspec) is 9.0 µm and their active area (A) is 1 mm × 1 mm. The detectors should operate in optimum bias voltage (Vb) and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged zinc selenide anti-reflection coating window (wZnSeAR) to prevent unwanted interference effects.


Spectral range: over 10.3 µm

Large active area

Front-side illuminated

Four-stage thermoelectrically cooled

No minimum order quantity required


Gas detection, monitoring and analysis: SO2, NH

FTIR spectroscopy

Detector configuration

Detector symbol
Detector type
Active element material epitaxial HgCdTe heterostructure
Cooling 4TE (Tchip ≅ 200 K)
Temperature sensor thermistor
Active area, A 1 mm × 1 mm
Optical immersion no
Package 4TE-TO8 4TE-TO66
Acceptance angle, Φ ~70 deg.
Window wZnSeAR (3 deg. wedged zinc0selenide, anti-reflection coating)


(Tamb = 293 K, Tchip = 200 K, Vb = 0.3 V)

Parameter Value
Min. Typ. Max.
Peak wavelength, λpeak 7.6±0.5 μm
Specific wavelength, λspec 9.0 μm
Cut-off wavelength, λcut-off (10%) 10.6 μm
Detectivity, D* (λpeak, 20 kHz) 1.9×109 cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 1.5×109 1.7×109 cm⋅Hz1/2/W
Current responsivity, Ripeak) 0.6 A/W
Current responsivity, Rispec) 0.1 0.3 A/W
Time constant, τ 80 ns
Resistance, R 250 Ω
Bias voltage, Vb 0.3 V
1/f corner frequency, fc 20 kHz

Spectral response

(Typ., Tamb = 293 K, Tchip = 230 K)


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Temperature sensor characteristics

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