home-icon/Products / Infrared detectors / HgCdTe (MCT) Photovoltaic / HgCdTe photovoltaic IR detectors PVI-4TE-3-1×1-TO8/TO66-wAl2O3-36

HgCdTe four-stage thermoelectrically cooled photovoltaic optically immersed infrared detectorsPVI-4TE-3-1×1-TO8/TO66-wAl2O3-36

PVI-4TE-3-1×1-TO8-wAl2O3-36 and PVI-4TE-3-1×1-TO66-wAl2O3-36 are four-stage thermoelectrically cooled (4TE) photovoltaic IR detectors based on HgCdTe heterostructures for optimal performance and stability, optically immersed to enhance the parameters. Their specific wavelength (λspec) is 3.0 µm and their optical area (Ao) is 1 mm × 1 mm. The cut‑on wavelength (λcut-on) can be optimized upon request. Applying a reverse bias (Vb) may significantly increase response speed and dynamic range. While this improves performance at high frequencies, be aware that the 1/f noise appearing in biased detectors may reduce performance at low frequencies. The detectors are available in TO8 and TO66 packages with a 3 deg. wedged sapphire window (wAl2O3) to prevent unwanted interference effects.


Spectral range: 2.2 to 3.35 µm

Back-side illuminated

Four-stage thermoelectrically cooled

Unique immersion lens technology applied

No bias required

No 1/f noise

No minimum order quantity required


Gas detection, monitoring and analysis: H2O, HF, CH4, C2H2, C2H4, C2H6, NH3

Combustion process control

Green energy

Medical laser control

Detector configuration

Detector symbol
Detector type
Active element material epitaxial HgCdTe heterostructure
Cooling 4TE (Tchip ≅ 198 K)
Temperature sensor thermistor
Optical area, Ao 1 mm × 1 mm
Optical immersion hyperhemisphere
Package 4TE-TO8 4TE-TO66
Acceptance angle, Φ ~36 deg.
Window wAl2O3 (3 deg. wedged sapphire)


(Tamb = 293 K, Tchip = 198 K, Vb = 0 V)

Parameter Value

Min. Typ. Max.
Cut-on wavelength, λcut-on (10%) 2.2 μm
Peak wavelength, λpeak 2.8±0.2 μm
Specific wavelength, λspec 3.0 μm
Cut-off wavelength, λcut-off (10%) 3.35 μm
Detectivity, D* (λpeak, 20 kHz) 2.0×1012 cm⋅Hz1/2/W
Detectivity, D* (λspec, 20 kHz) 8.0×1011 1.2×1012 cm⋅Hz1/2/W
Current responsivity, Ripeak) 1.4 A/W
Current responsivity, Rispec) 0.5 0.8 A/W
Time constant, τ 280 ns
Dynamic resistance, Rd 3 6

Spectral response

(Typ., Tamb = 293 K, Tchip = 198 K)


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Temperature sensor characteristics

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