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InAs Photovoltaic DetectorPVIA-3-1×1-TO39-NW-36

2.4 – 3.3 µm, ambient temperature, optically immersed

PVIA-3-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAs alloy, optically immersed in order to improve performance of the devices. It does not contain mercury or cadmium and is complying with the RoHS Directive.

Features

High performance in the 2.4 – 3.3 µm spectral range

Ambient temperature operation

Complying with the RoHS Directive

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVIA-3-1×1-TO39-NW-36
Active element material
epitaxial InAs heterostructure
Cut-on wavelength λcut-on (10%), µm
≤2.4
Peak wavelength λpeak , µm
2.9±0.3
Cut-off wavelength λcut-off (10%), µm
≥3.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥5.0×1010
Current responsivity Ripeak), A/W
≥1.1
Time constant τ, ns
≤20
Resistance R, Ω
≥2k
Optical area AO, mm×mm
1×1
Package
TO39
Acceptance angle, Φ
~36°
Window
none

Spectral response (Ta = 20°C, Vb = 0 mV)

PVIA-3-1

Mechanical layout, mm

TO39-imm-5

TO39 package

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Temperature sensor characteristics

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