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InAsSb Photovoltaic DetectorPVIA-2TE-5-1×1-TO8-wAl2O3-36
2.6 – 5.3 µm, two-stage thermoelectrically cooled
PVIA-2TE-5-1×1-TO8-wAl2O3-36 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
Features
High performance in the 2.6- 5.3 µm spectral range
Two-stage thermoelectrically cooled
Complying with the RoHS Directive
Hyperhemiimmersion microlens technology applied
No bias required
No 1/f noise
Specification (Ta = 20°C, Vb = 0 mV)
Parameter |
PVIA-2TE-5-1×1-TO8-wAl2O3-36 |
|
|
Active element material
|
epitaxial InAs heterostructure |
|
|
Cut-on wavelength λcut-on (10%), µm
|
≤2.6 |
|
|
Peak wavelength λpeak , µm
|
4.5±0.6 | |
|
Cut-off wavelength λcut-off (10%), µm
|
≥5.3 | |
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥4.0×1010
|
|
|
Current responsivity Ri(λpeak), A/W
|
≥1.2
|
|
|
Time constant τ, ns
|
≤5 |
|
|
Resistance R, Ω
|
≥1.0k |
|
|
Active element temperature Tdet, K
|
~230K | |
|
Optical area AO, mm×mm
|
1×1 |
|
|
Package
|
TO8 | |
|
Acceptance angle, Φ
|
~36° | |
|
Window
|
wAl2O3 |
|
Spectral response (Ta = 20°C, Vb = 0 mV)
Mechanical layout, mm
2TE-TO8 package
Access to file
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Application notes
Temperature sensor characteristics
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