home-icon/Products / Infrared detectors / InAs and InAsSb detectors / InAsSb superlattice photovoltaic IR detector PVIA-10.6-1×1-TO39-NW-36

InAsSb superlattice room-temperature optically immersed photovoltaic infrared detectorPVIA-10.6-1×1-TO39-NW-36

PVIA-10.6-1×1-TO39-NW-36 is an uncooled photovoltaic IR detector based on InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in the range from 1.8 μm to 12.0 μm. Its  optical area (Ao) is 1 mm × 1 mm. The detector is available in the TO39 package without a window.


Spectral range: 1.8 to 12.0 µm

RoHS compliant III-V material

Unique optical immersion technology applied

High ambient operating and storage temperature

Back-side illuminated

Long term stability

Fast response

No minimum order quantity required


Gas detection, monitoring and analysis: SO2, NH3, SF6

CBRN threats detection

CO2 laser measurements (power monitoring and control, beam profiling and positioning, calibration)

Free-space optical communication

FTIR spectroscopy

Medical bacteria identification


Glucose sensing

Detector configuration

Detector symbol PVIA-10.6-1×1-TO39-NW-36
Detector type photovoltaic
Active element material epitaxial InAsSb superlattice heterostructure
Cooling no
Temperature sensor n/a
Optical area, Ao 1 mm × 1 mm
Optical immersion hyperhemisphere
Package TO39 (3 pins)
Acceptance angle, Φ ~36 deg.
Window no


(Tamb = Tchip = 293 K, Vb = 0 V)

Parameter Value Unit
Min. Typ. Max
Cut-on wavelength, λcut-on (10%) 1.8 μm
Peak wavelength, λpeak 7.1 μm
Cut-off wavelength, λcut-off (10%) 12.0 μm
Detectivity, D* (λpeak, f = 20 kHz) 5.0×108 7.7×108 cm·Hz1/2/W
Current responsivity, Ripeak) 0.09 0.14 A/W
Time constant, τ 1.65 5  ns
Dynamic resistance, Rd 30 51 Ω

Spectral response

(Typ., Tamb = Tchip = 293 K)


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Temperature sensor characteristics

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