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HgCdTe (MCT) Photovoltaic DetectorPVI-4-1×1-TO39-NW-36

2.4 – 4.5 µm, ambient temperature, optically immersed

PVI-4-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

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Features

2.4 – 4.5 µm spectral range

Ambient temperature operation

Hyperhemiimmersion microlens technology applied

No bias required

No 1/f noise

Convenient to use

Very small size

Cost-effective solution

Quantity discounted price

Fast delivery

Applications

Gas detection, monitoring and analysis (CH4, C2H2, CH2O, HCl, NH3, SO2, C2H6)

Breath analysis

Explosion prevention

Flue gas denitrification

Emission control (exhaust fumes, greenhouse gases)

Specification (Ta = 20°C, Vb = 0 mV)

Parameter
PVI-4-1×1-TO39-NW-36
Active element material
epitaxial HgCdTe heterostructure
Cut-on wavelength λcut-on (10%) µm
2.4±0.5
Peak wavelength λpeak, µm
3.4±0.5
Optimum wavelength λopt, µm
4.0
Cut-off wavelength λcut-off (10%) µm
4.5±0.3
Detectivity D*(λpeak), cm⋅Hz1/2/W
≥3.4×1010
Detectivity D*(λopt), cm⋅Hz1/2/W
≥3.0×1010
Current responsivity Ripeak), A/W
≥1.7
Current responsivity Riopt), A/W
≥1.0
Time constant τ, ns
≤150
Resistance R, Ω
≥600
Optical area AO, mm×mm
1×1
Package
TO39
Acceptance angle, Φ
~36°
Window
none

Spectral response (Ta = 20°C, Vb = 0 mV)

PVI-4-1x1-TO39-NW-36-1

Mechanical layout, mm

TO39-imm-1-1

TO39 package

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Temperature sensor characteristics

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