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HgCdTe (MCT) Photoconductive DetectorPCI-10.6

1.0 – 12.0 µm, ambient temperature, optically immersed

PCI-10.6 is uncooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 10.6 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise.

Features

High performance in the 1.0 – 12.0 µm spectral range

Ambient temperature operation

Hyperhemiimmersion microlens technology applied

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (Ta = 20°C)

Parameter
PCI-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥1.0×108
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥8.0×107
Current responsivity-optical area length product Riopt)·LO, A·mm/W
≥0.008
Time constant τ, ns
≤3
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-optical area length ratio Vb/LO, V/mm
≤0.3
Resistance R, Ω
≤120
Optical area AO, mm×mm
0.5×0.5, 1×1, 2×2
Package
TO39, BNC
Acceptance angle, Φ
~36°
Window
none

Spectral response (Ta = 20°C)

PCI-10.6-1

Mechanical layout, mm

BNC-imm-1-3

BNC package

TO39-imm-2-3

TO39 package

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