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InGaAs room temperature photovoltaic infrared detectorPVA-1.7-d3AR-TO39-NW-90-B

PVA-1.7-d3AR-TO39-NW-90-B is an uncooled photovoltaic IR detector based on InGaAs heterostructure for optimal performance and stability. Its 10% cut-off wavelength (λcut-off) is 1.7 µm and the diameter (dA) of its active element (anti-reflection coated) is 3.0 mm. The detector is available in the TO39 package without a window.

Features

Cut-off wavelength: 1.7 μm

Anti-reflection coating on the active element

Large active area diameter: 3 mm

RoHS-compliant III-V material

High ambient operating and storage temperature

Long-term stability and reliability

Front-side illuminated

No minimum order quantity required

Applications

Gas detection, monitoring and analysis: CH4

Telecommunication

LIDARs

Laser range finder, laser warning system

Lasers and diodes life tests

Food analysis

Pharmaceutical analysis

Detector configuration

Detector symbol PVA-1.7-d3AR-TO39-NW-90-B
Detector type photovoltaic
Active element material epitaxial InGaAs heterostructure
Cooling no
Temperature sensor n/a
Active area diameter, dA 3 mm
Optical immersion no
Package TO39
Acceptance angle, Φ ~90 deg.
Window no

Specification

(Tamb = Tchip = 293 K, Vb = -5 V, unless otherwise noted)

Parameter Value Unit
Min. Typ. Max. -
Peak wavelength, λpeak - 1.62±0.03 μm
Cut-off wavelength, λcut-off (10%) 1.69 1.71 - μm
Detectivity, D* (λ= 1.55 μm, f = 20 kHz) 4.5×1011 - - cm·Hz1/2/W
Current responsivity, Ri (λ= 1.55 μm) 1.00 1.02 - A/W
Dark current, Idark - 200 400 nA
Dark current density, Jdark - 3.5×10-6 7.0×10-6 A/cm2
Terminal capacitance, Ct - - 500 pF
3 dB bandwidth, (Rload = 5 Ω) - 25 - MHz
Resistance, R (Vb = -10 mV) 1 - -
Bias voltage, Vb - -5 - V

Spectral response

(Typ., Tamb = Tchip = 293 K)

A graph showing current responsivity (R) in A/W on the y-axis versus wavelength (λ) in micrometers on the x-axis, ranging from 0.9 to 1.8 µm. The curve rises to about 1.1 A/W and falls sharply after 1.7 µm.
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Temperature sensor characteristics

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