/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
/Home / Products / Strona 5 HgCdTe (MCT) Detection ModuleLabM-I-6 3.0 – 7.5 µm, over 200 MHz, with optically immersed photovoltaic detector LabM-I-6 is a laboratory IR detection module with optically immersed photovoltaic detector based on HgCdTe heterostructure, integrated with…
/Home / Products / Strona 5 Programmable IR detection module based on HgCdTe thermoelectrically cooled optically immersed photovoltaic multi-junction detectorLabM-I-10.6 LabM-I-10.6 is a detection module featuring a TE-cooled, optically immersed photovoltaic multi-junction IR detector based on an HgCdTe heterostructure (PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36),…
/Home / Products / Strona 5 InAsSb Photovoltaic DetectorPVIA-5-1×1-TO39-NW-36 2.6 – 5.3 µm, ambient temperature, optically immersed PVIA-5-1×1-TO39-NW-36 is an uncooled IR photovoltaic detector based on InAsSb alloy, optically immersed in order to improve performance of the device. It does…
Polski
English
