/Home / Infrared detectors InAsSb one-stage thermoelectrically-cooled photovoltaic multi-junction infrared detectorPVMA-1TE-5-1×1-TO39-pSiAR-70 PVMA-1TE-5-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled photovoltaic multi-junction IR detector based on InAsSb heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.7 μm…
/Home / Infrared detectors InGaAs room temperature photovoltaic infrared detectorPVA-1.7-d1AR-TO39-BK7-70-B PVA-1.7-d1AR-TO39-BK7-70-B is an uncooled photovoltaic IR detector based on InGaAs heterostructure for optimal performance and stability. Its 10% cut-off wavelength (λcut-off) is 1.7 µm and the diameter (dA) of its active element…
/Home / Infrared detectors InAsSb superlattice four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorsPVIA-4TE-13-1×1-TO8-wZnSeAR-36 PVIA-4TE-13-1×1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAs/InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the…
/Home / Infrared detectors InAsSb superlattice four-stage thermoelectrically-cooled optically immersed photovoltaic infrared detectorsPVIA-4TE-10.6-1×1-TO8-wZnSeAR-36 PVIA-4TE-10.6-1×1-TO8-wZnSeAR-36 is a four-stage thermoelectrically cooled (4TE) photovoltaic IR detector based on InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the…
/Home / Infrared detectors InAsSb one-stage thermoelectrically-cooled photovoltaic multi-junction infrared detectorPVMA-1TE-6-1×1-TO39-pSiAR-70 PVMA-1TE-6-1×1-TO39-pSiAR-70 is a one-stage thermoelectrically cooled photovoltaic multi-junction IR detector based on InAsSb heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 2.2 μm…
/Home / Infrared detectors InAs room temperature photovoltaic infrared detectorPVA-3-d1.2-SMD-pAl2O3-115 PVA-3-d1.2-SMD-pAl2O3-115 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 1.3 μm to 3.6 μm. The…
/Home / Infrared detectors InAsSb superlattice room-temperature optically immersed photovoltaic infrared detectorPVIA-10.6-1×1-TO39-NW-36 PVIA-10.6-1×1-TO39-NW-36 is an uncooled photovoltaic IR detector based on InAsSb superlattice heterostructure for optimal performance and stability, optically immersed to enhance the parameters. It enables the detection of radiation in…
/Home / Infrared detectors InAsSb room-temperature photovoltaic infrared detectorPVIA-5-1×1-TO39-NW-36 PVIA-5-1×1-TO39-NW-36 is a room-temperature IR photovoltaic detector based on InAsSb heterostructure. It enables the detection of radiation in the range from 2.6 μm to 5.3 μm. The detector element is monolithically integrated with…
/Home / Infrared detectors InAs room temperature photovoltaic infrared detectorPVA-3-1×1-TO39-NW-90 PVA-3-1×1-TO39-NW-90 is an uncooled photovoltaic IR detector based on InAs heterostructure for optimal performance and stability. It enables the detection of radiation in the range from 2.3 μm to 3.5 μm. Its…
/Home / Infrared detectors Type II Superlattice Photoconductive DetectorPCAS-2TE-11-0.1×0.1-TO8-wZnSeAR-70 1.6 – 12.0 µm, two-stage thermoelectrically cooled PCAS-2TE-11-0.1×0.1-TO8-wZnSeAR-70 is a Type II superlattice two-stage thermoelectrically cooled IR photoconductor, with excellent parameters. Photoconductive detector should operate in optimum bias voltage and current readout mode.
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