home-icon/Products / Infrared detectors / HgCdTe (MCT) Photoconductive / HgCdTe (MCT) Photoconductive Detector PC-10.6

HgCdTe (MCT) Photoconductive DetectorPC-10.6

1.0 – 12.0 µm, ambient temperature

PC-10.6 is uncooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 10.6 μm. The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise.

Features

High performance in the 1.0 – 12.0 µm spectral range

Ambient temperature operation

Active area from 50×50 µm^2 to 4×4 mm^2

Long lifetime and MTBF

Stability and reliability

1/f noise

Specification (Ta = 20°C)

Parameter
PC-10.6
Active element material
epitaxial HgCdTe heterostructure
Optimum wavelength λopt, µm
10.6
Detectivity D*(λpeak, 20 kHz), cm⋅Hz1/2/W
≥1.9×107
Detectivity D*(λopt, 20 kHz), cm⋅Hz1/2/W
≥9.0×106
Current responsivity-active area length product Riopt)·L, A·mm/W
≥0.001
Time constant τ, ns
≤3
1/f noise corner frequency fc, Hz
≤20k
Bias voltage-active area length ratio Vb/L, V/mm
≤3.0
Resistance R, Ω
≤120
Active area A, mm×mm
0.05×0.05, 0.1×0.1, 0.25×0.25, 0.5×0.5, 1×1, 2×2, 3×3
Package
TO39 BNC
Acceptance angle, Φ
~90° ~102° *)

~124° **)

Window
none

*)  Aperture C = Ø4 mm.

**)  Aperture C = Ø6 mm.

Spectral response (Ta = 20°C)

PC-10.6-1

Mechanical layout, mm

BNC-non-imm-1-2

BNC package

TO39-non-imm-2-2

TO39 package

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Temperature sensor characteristics

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